Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

摘要

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructuresis presented. The nonlinear dependence of the capacitance on the gate voltageand in-plane magnetic field is discussed together with the capacitance quantumsteps connected with a population of higher 2D gas subbands. The results offull self-consistent numerical calculations are compared to recent experimentaldata.